Your Professional Sic Device Supplier
Xian Baochen Information Technology Co., Ltd. is located in high-tech Zone, Xi 'an, Shaanxi Province, China, is a focus on sensors, transmitters, inverters, power semiconductor devices and supporting instruments R & D, manufacturing, sales and service enterprises. The company invests in research and development team, cooperates with excellent universities, integrates industry resources, and provides the best quality solutions for domestic and foreign users. Enterprise mission: to meet user needs and create value for customers.
Why choose us
Sales Market
We Products are exported to Europe, America, Southeast Asia, West Asia, Central Asia and other countries around the world. Our products are well received in these markets.
Our Service
Able to quickly respond to customer needs, to provide personalized customization, timely delivery, professional technical support and perfect after-sales service.
Strict Quality Control System
Able to efficiently produce large quantities of products, advanced production processes and stable supply chains, the implementation of strict quality control system. Constantly introduce new technologies and new materials to improve product performance and production efficiency.
Wide Range of Applications
Through the EU CE, RoHs testing, products are widely used in petrochemical, water conservancy and hydrology, machinery and equipment, automobile manufacturing, industrial process control, weighing measurement, people's livelihood applications and other fields.
Sic Mosfet
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are type of power semiconductor devices that utilizes Silicon Carbide (SiC) as the semiconductor material. Silicon Carbide is a compound composed of silicon and carbon, and offers high thermal conductivity, wide bandgap, and high breakdown voltage. SiC represents the next generation of low-loss semiconductors, aiming to minimize switching losses and enhance performance, particularly in high-temperature conditions. This advancement enables the creation of smaller, lower power, and more efficient power devices compared to traditional silicon counterparts. SiC MOSFETs can reduce switching losses by fast switching due to theoretically no tail-current at switching operation. Low Ron with smaller die size, and low capacitance and gate-charge are achieved.
|
Part No. |
Package |
BVDSS(V) |
ID(A)@Tc=25℃ |
VGS(V) |
RDS(on) (mΩ)typ |
Tjmx(℃) |
Qg(nC) |
|
WSCM01KMA170T2C |
TO-263US-7L |
1700 |
5 |
-5~15 |
720 |
175 |
13 |
|
WSCM01KJ170T2C |
TO-247-3L |
1700 |
5 |
-5~15 |
720 |
175 |
13 |
|
WSCM160R120T2C |
TO-247-4L |
1200 |
17 |
-5~20 |
160 |
175 |
42 |
|
WSCM80MA120T2C |
TO-263US-7L |
1200 |
28 |
-5~20 |
80 |
175 |
85 |
|
WSCM80R120T2C |
TO-247-4L |
1200 |
28 |
-5~20 |
80 |
175 |
85 |
|
WSCM032MA120T2C |
TO-263US-7L |
1200 |
60 |
-5~18 |
30 |
175 |
128 |
|
WSCM032R120T2C |
TO-247-4L |
1200 |
60 |
-5~18 |
30 |
175 |
128 |
|
WSCM060LL65T2C |
TOLL |
650 |
30 |
-5~20 |
60 |
175 |
65 |
|
WSCM060R65T2C |
TO-247-4L |
650 |
30 |
-5~20 |
60 |
175 |
65 |
|
WSCM035J65T2C |
TO-247-3L |
650 |
60 |
-5~18 |
35 |
175 |
70 |
|
WSCM035R65T2C |
TO-247-4L |
650 |
60 |
-5~18 |
35 |
175 |
70 |
|
WSCM035LL65T2C |
TOLL |
650 |
60 |
-5~18 |
35 |
175 |
70 |
|
WSCM032J120T2C |
TO-247-3L |
1200 |
60 |
-5~18 |
30 |
175 |
128 |
|
WSCM80J120T2C |
TO-247-3L |
1200 |
28 |
-5~20 |
80 |
175 |
85 |
|
WSCM01KEA170T2C |
TO-3PF |
1700 |
5 |
-5~15 |
720 |
175 |
13 |
Advantages of Sic Mosfet
High Breakdown Voltage
Silicon carbide’s breakdown electric field is 10 times that of silicon, allowing the manufacture of smaller, higher-voltage SiC MOSFETs. This enables achieving high breakdown voltage while using thinner drift layers.
Current Density
SiC MOSFETs offer much higher current density than silicon MOSFETs, crucial for high-power applications.
High-Temperature Operation
Silicon carbide MOSFETs can operate at higher temperatures, allowing them to take advantage of higher current density without concerns about the device’s actual temperature.
Low Switching Losses
Silicon carbide technology gives SiC MOSFETs lower on-resistance, resulting in reduced conduction losses.
High Switching Frequency
SiC MOSFETs have a higher switching speed, allowing for the use of higher switching frequencies, thus reducing circuit size and costs.
Short Reverse Recovery Time
SiC MOSFETs have a fast reverse recovery time, in the range of tens of nanoseconds, much faster than silicon MOSFETs. This is crucial for improving circuit operation speed.
Electric Vehicles (EV): Their ability to manage high voltages and currents efficiently makes them ideal for EV power trains, resulting in extended driving range and faster charging periods.
Renewable Energy Systems: SiC MOSFETs can efficiently convert power from renewable sources, such as solar and wind, leading to a cleaner and more sustainable future.
Industrial Motor Drives: Their high performance makes them ideal for regulating industrial motors, resulting in increased efficiency and dependability in many industrial applications.
Power Supplies: SiC MOSFETs enhance efficiency and power density for electrical devices.
Structure of Sic Mosfet
Source
This layer is the source of electrons in the device and is typically connected to the negative terminal of the power supply.
Gate
The gate is the control terminal of the MOSFET, responsible for switching the device on and off. It controls the flow of electrons from the source to the drain.
Drain
The drain is the output terminal of the MOSFET, connected to the load in most power electronic applications.
Working Principle
Cross section of SiC MOSFET with equivalent circuit
When a positive voltage is applied to the gate terminal relative to the source, it creates an electric field that attracts electrons, forming a conductive channel between the source and drain terminals, allowing current to flow, making it the “on” state. Conversely, applying zero or negative voltage to the gate turns off the electric field, blocking current flow and placing the SiC MOSFET in the “off” state.
Design consideration of Sic Mosfet
Gate Drive Circuitry: Ensuring that the gate driver can provide the necessary voltage and current for proper switching is crucial. Gate resistors should be used to manage voltage transitions, and galvanic isolation techniques can help protect against noise and voltage spikes.
Thermal Management: Effective cooling solutions, such as heat sinks and quality thermal interface materials, are essential to manage the heat generated during SiC MOSFET operation, ensuring reliable performance and longevity.
Voltage and Current Ratings: Matching the SiC MOSFET's voltage and current ratings to the specific application requirements is fundamental in preventing device failure and ensuring optimal operation.
Gate Voltage and Threshold Voltage: Understanding the gate-source voltage (VGS) requirements and the SiC MOSFET's threshold voltage (VTH) characteristics is crucial to ensure reliable switching behavior and avoid unintended states.
Switching Frequency: Choosing SiC MOSFETs with suitable switching characteristics, and optimizing for the desired operating frequency, is vital to maximize efficiency and minimize switching losses.
Layout and PCB Design: Careful layout and PCB design help minimize parasitic components, ensuring efficient performance and reducing the risk of voltage spikes or noise interference in the circuit.
FAQ
As one of the leading sic device manufacturers and suppliers in China, we warmly welcome you to wholesale cheap sic device in stock here from our factory. All customized products are with high quality and competitive price.
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