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Sic Mosfet

The SiC MOSFET has a higher switching frequency, very low switching
losses, improves the power conversion efficiency of the system and
reduces the heat dissipation requirements of the thermal cycle, and
with IGBT-compatible driving voltage, fully controllable dv/dt,
high blocking voltage with low on-resistance, fast intrinsic diode
with low reverse recovery, temperature independent turn-off switching
losses, Halogen free, RoHS compliant. Mainly applicable to: PV inverter,
energy storage, industrial power supply, motor drive, charging pile
and other fields.

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Description

SiC MOSFET is a field-effect transistor based on silicon carbide semiconductor material,

which has significant improvement in performance compared with traditional silicon MOSFET. ‌

Key benefits of SiC MOSFETs include:

‌ high working frequency ‌ : SiC MOSFETs working frequency is much higher than traditional

silicon MOSFETs, can reach 1MHz or even higher, which makes the power system in the

capacitor, inductor or transformer volume can be reduced, thereby reducing the cost of

power supply, to achieve the miniaturization and beauty of power ‌.

‌ low on-impedance ‌ : the on-impedance of SiC MOSFET is low, and the minimum internal

resistance of a single tube can reach several milliohms, which helps to reduce the use of

heat sinks, further reduce the volume and weight of the power supply, and improve the

efficiency and reliability of the power supply ‌.

‌high voltage ‌ : SiC MOSFETs have a high voltage resistance, which is particularly important

for high pressure applications ‌.

‌high temperature stability ‌ : due to its high temperature working characteristics, SiC MOSFET

greatly improves the high temperature stability, suitable for high temperature working

environment ‌.

High operating temperature ‌ : The maximum guaranteed operating temperature of

commercial SiC MOSFETs is 150°C < Tj < 200°C, and the junction temperature can reach up

to 600 °C, which makes SiC suitable for high voltage, high speed, high current, high temperature,

switching power supply applications ‌.

Part No.	Package	BVDSS(V)	ID(A)@Tc=25℃	VGS(V)	RDS(on) (mΩ)typ	Tjmx(℃)	Qg(nC)
WSCM01KMA170T2C	TO-263US-7L	1700	5	-5~15	720	175	13
WSCM01KJ170T2C	TO-247-3L	1700	5	-5~15	720	175	13
WSCM160R120T2C	TO-247-4L	1200	17	-5~20	160	175	42
WSCM80MA120T2C	TO-263US-7L	1200	28	-5~20	80	175	85
WSCM80R120T2C	TO-247-4L	1200	28	-5~20	80	175	85
WSCM032MA120T2C	TO-263US-7L	1200	60	-5~18	30	175	128
WSCM032R120T2C	TO-247-4L	1200	60	-5~18	30	175	128
WSCM060LL65T2C	TOLL	650	30	-5~20	60	175	65
WSCM060R65T2C	TO-247-4L	650	30	-5~20	60	175	65
WSCM035J65T2C	TO-247-3L	650	60	-5~18	35	175	70
WSCM035R65T2C	TO-247-4L	650	60	-5~18	35	175	70
WSCM035LL65T2C	TOLL	650	60	-5~18	35	175	70
WSCM032J120T2C	TO-247-3L	1200	60	-5~18	30	175	128
WSCM80J120T2C	TO-247-3L	1200	28	-5~20	80	175	85
WSCM01KEA170T2C	TO-3PF	1700	5	-5~15	720	175	13