Igbt Modules

‌IGBT module is a composite of MOSFET and bipolar transistor device, it combines

the advantages of these two devices, with high input impedance, low on-voltage

drop, fast switching speed and so on. IGBT module has been widely used in modern

power electronics technology, especially in high frequency, medium power applications

occupy a dominant position.
The main features of IGBT module include:
Combining the advantages of MOSFET and bipolar transistor ‌ : the input of IGBT

module is MOSFET and the output is PNP transistor, which combines the advantages

of small MOSFET drive power and fast switching speed, as well as the advantages

of low saturation voltage and large capacity of bipolar devices.
‌ suitable for high frequency applications ‌ :

IGBT module can work normally in the frequency range of tens of kHz, very suitable

for use in DC voltage 600V and above converter system, such as AC motor, inverter,

switching power supply, lighting circuit, traction drive and other fields.
‌internal structure ‌ :

The IGBT module contains a cooling base board, a DBC base board and a silicon chip

(including IGBT chip and Diode). These components together ensure the efficient work

and stability of the module.
IGBT module as a high-performance power electronic device, its wide application fields

and high reliability make it become an indispensable part of modern electronic technology ‌.
‌high temperature stability ‌ :

due to its high temperature working characteristics, SiC MOSFET greatly improves the

high temperature stability, suitable for high temperature working environment ‌.
High operating temperature ‌ : The maximum guaranteed operating temperature

of commercial SiC MOSFETs is 150°C < Tj < 200°C, and the junction temperature

can reach up to 600 °C, which makes SiC an excellent material for high voltage, high

speed, high current, high temperature, switching power supply applications ‌.

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